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dc.contributor.authorOfori-Okai, Benjamin Kwasi
dc.contributor.authorTao, Ye, Ph. D. Massachusetts Institute of Technology
dc.contributor.authorPezzagna, S.
dc.contributor.authorChang, K.
dc.contributor.authorLoretz, M.
dc.contributor.authorSchirhagl, R.
dc.contributor.authorMoores, B. A.
dc.contributor.authorGroot-Berning, K.
dc.contributor.authorMeijer, J.
dc.contributor.authorDegen, Christian
dc.date.accessioned2012-10-30T16:15:16Z
dc.date.available2012-10-30T16:15:16Z
dc.date.issued2012-08
dc.date.submitted2012-01
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/74508
dc.description.abstractWe investigate spin and optical properties of individual nitrogen vacancy centers located within 1–10 nm from the diamond surface. We observe stable defects with a characteristic optically detected magnetic-resonance spectrum down to the lowest depth. We also find a small but systematic spectral broadening for defects shallower than about 2 nm. This broadening is consistent with the presence of a surface paramagnetic impurity layer [ Tisler et al. ACS Nano 3 1959 (2009)] largely decoupled by motional averaging. The observation of stable and well-behaved defects very close to the surface is critical for single-spin sensors and devices requiring nanometer proximity to the target.en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.86.081406en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleSpin properties of very shallow nitrogen vacancy defects in diamonden_US
dc.typeArticleen_US
dc.identifier.citationOfori-Okai, B. et al. “Spin Properties of Very Shallow Nitrogen Vacancy Defects in Diamond.” Physical Review B 86.8 (2012). ©2012 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistryen_US
dc.contributor.mitauthorOfori-Okai, Benjamin Kwasi
dc.contributor.mitauthorTao, Ye, Ph. D. Massachusetts Institute of Technology
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsOfori-Okai, B.; Pezzagna, S.; Chang, K.; Loretz, M.; Schirhagl, R.; Tao, Y.; Moores, B.; Groot-Berning, K.; Meijer, J.; Degen, C.en
dc.identifier.orcidhttps://orcid.org/0000-0002-0737-6786
dc.identifier.orcidhttps://orcid.org/0000-0003-0018-7584
dspace.mitauthor.errortrue
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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