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dc.contributor.authorLi, Zirui
dc.contributor.authorLim, Kian Meng
dc.contributor.authorWhite, Jacob K.
dc.contributor.authorHan, Jongyoon
dc.contributor.authorPham, Van-Sang
dc.date.accessioned2013-01-02T17:37:19Z
dc.date.available2013-01-02T17:37:19Z
dc.date.issued2012-10
dc.date.submitted2012-09
dc.identifier.issn1539-3755
dc.identifier.issn1550-2376
dc.identifier.urihttp://hdl.handle.net/1721.1/75816
dc.description.abstractWe present a systematic, multiscale, fully detailed numerical modeling for dynamics of fluid flow and ion transport covering Ohmic, limiting, and overlimiting current regimes in conductance of ion-selective membrane. By numerically solving the Poisson-Nernst-Planck-Navier-Stokes equations, it is demonstrated that the electroconvective instability, arising from the electric field acting upon the extended space charge layer, and the induced strong vortical fluid flow are the dominant factors of the overlimiting current in the planar membrane system. More importantly, at the transition between the limiting and the overlimiting current regimes, hysteresis of electric current is identified. The hysteresis demonstrates the important role of the electroconvective flow in enhancing of current in electrolyte systems with ion-selective membrane.en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevE.86.046310en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleDirect numerical simulation of electroconvective instability and hysteretic current-voltage response of a permselective membraneen_US
dc.typeArticleen_US
dc.identifier.citationPham, Van et al. “Direct Numerical Simulation of Electroconvective Instability and Hysteretic Current-voltage Response of a Permselective Membrane.” Physical Review E 86.4 (2012). © 2012 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentSingapore-MIT Alliance in Research and Technology (SMART)en_US
dc.contributor.departmentSingapore-MIT Alliance in Research and Technology (SMART)en_US
dc.contributor.mitauthorPham, Van Sang
dc.contributor.mitauthorLi, Zirui
dc.contributor.mitauthorLim, Kian Meng
dc.contributor.mitauthorWhite, Jacob K.
dc.contributor.mitauthorHan, Jongyoon
dc.relation.journalPhysical Review Een_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsPham, Van; Li, Zirui; Lim, Kian; White, Jacob; Han, Jongyoonen
dc.identifier.orcidhttps://orcid.org/0000-0003-1080-4005
dc.identifier.orcidhttps://orcid.org/0000-0001-7215-1439
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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