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Zone folding effect in Raman G-band intensity of twisted bilayer graphene

Author(s)
Sato, Kentaro; Saito, Riichiro; Cong, Chunxiao; Yu, Ting; Dresselhaus, Mildred
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Abstract
The G-band Raman intensity is calculated for twisted bilayer graphene as a function of laser excitation energy based on the extended tight binding method. Here we explicitly consider the electron-photon and electron-phonon matrix elements of twisted bilayer graphene to calculate the resonance Raman intensity. The G-band Raman intensity is sensitive to the laser excitation energy and the twisting angle between the layers as a result of folding the electronic energy band structure. The Van Hove energy singularity, which is an electron transition energy between the conduction and valence bands, depends on n−m of the twisting vector (n,m). The relative intensity of the G band as a function of twisting vectors is presented, which should be useful for the experimental identification of the twisting angle.
Date issued
2012-09
URI
http://hdl.handle.net/1721.1/75831
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Physics
Journal
Physical Review B
Publisher
American Physical Society
Citation
Sato, Kentaro et al. “Zone Folding Effect in Raman G-band Intensity of Twisted Bilayer Graphene.” Physical Review B 86.12 (2012). © 2012 American Physical Society
Version: Final published version
ISSN
1098-0121
1550-235X

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