Etching of Graphene Devices with a Helium Ion Beam
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We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO[subscript 2]) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.
Date issued
2009-09Department
Massachusetts Institute of Technology. Department of PhysicsJournal
ACS Nano
Publisher
American Chemical Society (ACS)
Citation
Lemme, Max C. et al. “Etching of Graphene Devices with a Helium Ion Beam.” ACS Nano 3.9 (2009): 2674–2676.
Version: Author's final manuscript
ISSN
1936-0851
1936-086X