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dc.contributor.authorChen, Kejia
dc.contributor.authorVaidyanathan, Ramakrishnan
dc.contributor.authorSeebauer, Edmund G.
dc.contributor.authorBraatz, Richard D.
dc.date.accessioned2013-03-21T14:23:59Z
dc.date.available2013-03-21T14:23:59Z
dc.date.issued2010-01
dc.date.submitted2009-07
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.urihttp://hdl.handle.net/1721.1/77956
dc.description.abstractIn many solids, diffusion of foreign atoms takes place primarily through highly mobile intermediate species that periodically exchange with atoms in the crystalline lattice. The governing reaction-diffusion equations include a diffusion coefficient as well as kinetic parameters describing the exchange of the intermediate species. Yet it is often convenient to model a diffusive process in terms of a single parameter, no matter what the time regime. This communication derives for a delta function initial profile an exact expression for the effective diffusivity that is valid in all time regimes. In the case of semiconductor solids, such an expression can be helpful in the interpretation of dopant diffusion measurements.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DRL 0426328)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR 0704354)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3294479en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT Web Domainen_US
dc.titleGeneral expression for effective diffusivity of foreign atoms migrating via a fast intermediateen_US
dc.typeArticleen_US
dc.identifier.citationChen, Kejia et al. “General Expression for Effective Diffusivity of Foreign Atoms Migrating via a Fast Intermediate.” Journal of Applied Physics 107.2 (2010): 026101. ©2010 American Institute of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemical Engineeringen_US
dc.contributor.mitauthorBraatz, Richard D.
dc.relation.journalJournal of Applied Physicsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsChen, Kejia; Vaidyanathan, Ramakrishnan; Seebauer, Edmund G.; Braatz, Richard D.en
dc.identifier.orcidhttps://orcid.org/0000-0003-4304-3484
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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