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Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice

dc.contributor.authorMaznev, Alexei
dc.contributor.authorHofmann, Felix
dc.contributor.authorJandl, Adam Christopher
dc.contributor.authorEsfarjani, Keivan
dc.contributor.authorBulsara, Mayank
dc.contributor.authorFitzgerald, Eugene A.
dc.contributor.authorChen, Gang
dc.contributor.authorNelson, Keith Adam
dc.date.accessioned2013-04-11T19:32:20Z
dc.date.available2013-04-11T19:32:20Z
dc.date.issued2013-01
dc.date.submitted2012-10
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/78357
dc.description.abstractWe measure the lifetime of the zone-center 340 GHz longitudinal phonon mode in a GaAs-AlAs superlattice excited and probed with femtosecond laser pulses. By comparing measurements conducted at room temperature and liquid nitrogen temperature, we separate the intrinsic (phonon-phonon scattering) and extrinsic contributions to phonon relaxation. The estimated room temperature intrinsic lifetime of 0.95 ns is compared to available calculations and experimental data for bulk GaAs. We conclude that ∼0.3 THz phonons are in the transition zone between Akhiezer and Landau-Rumer regimes of phonon-phonon relaxation at room temperature.en_US
dc.description.sponsorshipUnited States. Dept. of Energy. Office of Basic Energy Sciences (Award DE-SC0001299)en_US
dc.description.sponsorshipUnited States. Dept. of Energy (Grant DE-FG02-00ER15087)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4789520en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alike 3.0en_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/en_US
dc.sourcearXiven_US
dc.titleLifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlatticeen_US
dc.typeArticleen_US
dc.identifier.citationMaznev, A. A. et al. “Lifetime of sub-THz Coherent Acoustic Phonons in a GaAs-AlAs Superlattice.” Applied Physics Letters 102.4 (2013): 041901.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Materials Processing Centeren_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. School of Engineeringen_US
dc.contributor.mitauthorMaznev, Alexei
dc.contributor.mitauthorHofmann, Felix
dc.contributor.mitauthorJandl, Adam Christopher
dc.contributor.mitauthorEsfarjani, Keivan
dc.contributor.mitauthorBulsara, Mayank
dc.contributor.mitauthorFitzgerald, Eugene A.
dc.contributor.mitauthorChen, Gang
dc.contributor.mitauthorNelson, Keith Adam
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsMaznev, A. A.; Hofmann, Felix; Jandl, Adam; Esfarjani, Keivan; Bulsara, Mayank T.; Fitzgerald, Eugene A.; Chen, Gang; Nelson, Keith A.en
dc.identifier.orcidhttps://orcid.org/0000-0002-1891-1959
dc.identifier.orcidhttps://orcid.org/0000-0002-3968-8530
dc.identifier.orcidhttps://orcid.org/0000-0001-7804-5418
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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