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Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field

dc.contributor.authorLi, Bin
dc.contributor.authorRoschewsky, Niklas
dc.contributor.authorAssaf, Badih A.
dc.contributor.authorEich, Marius
dc.contributor.authorEpstein-Martin, Marguerite
dc.contributor.authorHeiman, D.
dc.contributor.authorMuenzenberg, Markus G.
dc.contributor.authorMoodera, Jagadeesh
dc.date.accessioned2013-05-14T15:33:48Z
dc.date.available2013-05-14T15:33:48Z
dc.date.issued2013-02
dc.date.submitted2012-12
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.urihttp://hdl.handle.net/1721.1/78880
dc.description.abstractA theoretical prediction by de Gennes suggests that the resistance in a FI/S/FI (where FI is a ferromagnetic insulator, and S is a superconductor) structure will depend on the magnetization direction of the two FI layers. We report a magnetotransport measurement in a EuS/Al/EuS structure, showing that an infinite magnetoresistance can be produced by tuning the internal exchange field at the FI/S interface. This proximity effect at the interface can be suppressed by an Al[subscript 2]O[subscript 3] barrier as thin as 0.3 nm, showing the extreme confinement of the interaction to the interface giving rise to the demonstrated phenomena.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR-1207469)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR-0907007)en_US
dc.description.sponsorshipUnited States. Office of Naval Research (Grant N00014-09-1-0177)en_US
dc.description.sponsorshipUnited States. Office of Naval Research (Grant N00014-13-1-0301)en_US
dc.description.sponsorshipMIT Center for Excitonicsen_US
dc.description.sponsorshipUnited States. Dept. of Energy. Office of Basic Energy Sciences (Office of Science DE-SC0001088)en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.110.097001en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleSuperconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Fielden_US
dc.typeArticleen_US
dc.identifier.citationLi, Bin, Niklas Roschewsky, Badih A. Assaf, et al. Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field. Physical Review Letters 110(9), 2013. © 2013 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.departmentFrancis Bitter Magnet Laboratory (Massachusetts Institute of Technology)en_US
dc.contributor.mitauthorLi, Bin
dc.contributor.mitauthorRoschewsky, Niklas
dc.contributor.mitauthorEich, Marius
dc.contributor.mitauthorEpstein-Martin, Marguerite
dc.contributor.mitauthorMoodera, Jagadeesh
dc.relation.journalPhysical Review Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsLi, Bin; Roschewsky, Niklas; Assaf, Badih A.; Eich, Marius; Epstein-Martin, Marguerite; Heiman, Don; Münzenberg, Markus; Moodera, Jagadeesh S.en
dc.identifier.orcidhttps://orcid.org/0000-0002-2480-1211
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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