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dc.contributor.authorAhn, Sung-Min
dc.contributor.authorBeach, Geoffrey Stephen
dc.date.accessioned2013-07-01T19:33:03Z
dc.date.available2013-07-01T19:33:03Z
dc.date.issued2013-04
dc.date.submitted2012-11
dc.identifier.issn00218979
dc.identifier.urihttp://hdl.handle.net/1721.1/79398
dc.description.abstractInterfacial magnetic anisotropy in Ta/Co[subscript x]Fe[subscript 100-x] (CoFe)/MgO films for alloy compositions spanning pure Co to pure Fe has been studied in order to investigate the role of chemical composition in the onset of perpendicular magnetic anisotropy at the CoFe/MgO interface. Out-of-plane magnetization is not observed in Ta/Fe/MgO (x = 0) and Ta/Co/MgO (x = 100), for all ranges of CoFe thickness (t), but a t-dependent crossover between in-plane and out-of-plane anisotropy is found for x = 20, 50, and 80. Interestingly, effective magnetic anisotropy K[subscript u] as well as interfacial anisotropy Ki are maximized for Co[subscript 50]Fe[subscript 50] at a fixed t = 0.8 nm. The results suggest that the degree of filling of valence bands in the CoFe adjacent to the interface, which determines the relative population of the anisotropic d-bands, plays an important role in the interfacial anisotropy brought on by CoFe-O hybridization at the metal/oxide interface.en_US
dc.description.sponsorshipNational Science Foundation (U.S.)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4799779en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleCrossover between in-plane and perpendicular anisotropy in Ta/CoxFe100-x/MgO films as a function of Co compositionen_US
dc.typeArticleen_US
dc.identifier.citationAhn, Sung-Min, and G. S. D. Beach. Crossover Between In-plane and Perpendicular Anisotropy in Ta/CoxFe100-x/MgO Films as a Function of Co Composition. Journal of Applied Physics 113, no. 17 (2013): 17C112. © 2013 American Institute of Physics.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorAhn, Sungminen_US
dc.contributor.mitauthorBeach, Geoffrey Stephenen_US
dc.relation.journalJournal of Applied Physicsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsAhn, Sung-Min; Beach, G. S. D.en_US
dspace.mitauthor.errortrue
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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