Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet

Author(s)
Bauer, Uwe; Emori, Satoru; Beach, Geoffrey Stephen
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Abstract
The influence of gate voltage, temperature, and magnetic field on domain wall (DW) creep dynamics is investigated in Pt/Co/gadolinium oxide (GdOx) films with perpendicular magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect technique. The DW creep velocity can be controlled by an electric field applied to the Co/GdOx interface via a linear modulation of the activation energy barrier with gate voltage. At low speeds, the DW velocity can be changed significantly by a gate voltage, but the effect is diminished as the DW velocity increases, which limits electric field control of fast DW motion.
Date issued
2012-10
URI
http://hdl.handle.net/1721.1/79413
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Applied Physics Letters
Publisher
American Institute of Physics
Citation
Bauer, Uwe, Satoru Emori, and Geoffrey S. D. Beach. Voltage-gated Modulation of Domain Wall Creep Dynamics in an Ultrathin Metallic Ferromagnet. Applied Physics Letters 101, no. 17 (2012): 172403. © 2012 American Institute of Physics.
Version: Final published version
ISSN
00036951
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