Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1−x]/Ge interface
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Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate is predicted to allow the confinement of electrons in the germanium, and the conduction band profile of germanium rich heterostructures allow the implementation of g-factor modulation devices not possible in Silicon. We here prove that electrons can indeed be trapped at the Si[subscript 0.1]Ge[subscript 0.9]/Ge interface and we measure the height of the energy barrier to 0.55±0.05 eV by measuring the tunneling time of electrons as a function of the electric field.
Date issued
2010-05Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Mazzeo, G., E. Yablonovitch, H. W. Jiang, Y. Bai, and E. A. Fitzgerald. “Conduction band discontinuity and electron confinement at the Si[sub x]Ge[sub 1−x]/Ge interface.” Applied Physics Letters 96, no. 21 (2010): 213501. © 2010 American Institute of Physics
Version: Final published version
ISSN
00036951
1077-3118