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dc.contributor.authorRaghunathan, Vivek
dc.contributor.authorIzuhara, Tomoyuki
dc.contributor.authorMichel, Jurgen
dc.contributor.authorKimerling, Lionel C.
dc.date.accessioned2013-07-30T16:29:52Z
dc.date.available2013-07-30T16:29:52Z
dc.date.issued2012-06
dc.date.submitted2012-05
dc.identifier.issn1094-4087
dc.identifier.urihttp://hdl.handle.net/1721.1/79724
dc.description.abstractTemperature sensitivity of Si based rings can be nullified by the use of polymer over-cladding. Integration of athermal passive rings in an electronic-photonic architecture requires the possibility of multi-layer depositions with patterned structures. This requires establishing UV, thermal and plasma stability of the polymer during multi-layer stacking. UV stability is enhanced by UV curing to saturation levels. However, thermal stability is limited by the decomposition temperature of the polymer. Further, robust performance in oxidizing atmosphere and plasma exposure requires a SiO[subscript 2]/SiN[subscript x] based dielectric coatings on the polymer. This communication uses a low temperature (130°C) High Density Plasma Chemical Vapor Deposition (HDPCVD) for dielectric encapsulation of polymer cladded Si rings to make them suitable for device layer deposition. UV induced cross-linking and annealing under vacuum make polymer robust and stable for Electron Cyclotron Resonance (ECR)-PECVD deposition of 500nm SiO[subscript 2]/SiN[subscript x]. The thermo-optic (TO) properties of the polymer cladded athermal rings do not change after dielectric cap deposition opening up possibilities of device deposition on top of the passive athermal rings. Back-end CMOS compatibility requires polymer materials with high decomposition temperature (> 400°C) that have low TO coefficients. This encourages the use of SiN[subscript x] core waveguides in the back-end architecture for athermal applications.en_US
dc.description.sponsorshipNaval Air Warfare Center-Aircraft Division (U.S.) (OTA N00421-03-9-002)en_US
dc.description.sponsorshipAPIC Corporation. Fully LASER Integrated Photonics (FLIP) Programen_US
dc.language.isoen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OE.20.016059en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleStability of polymer-dielectric bi-layers for athermal silicon photonicsen_US
dc.typeArticleen_US
dc.identifier.citationRaghunathan, Vivek et al. “Stability of Polymer-dielectric Bi-layers for Athermal Silicon Photonics.” Optics Express 20.14 (2012): 16059. © 2012 OSAen_US
dc.contributor.departmentMassachusetts Institute of Technology. Materials Processing Centeren_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microphotonics Centeren_US
dc.contributor.mitauthorRaghunathan, Viveken_US
dc.contributor.mitauthorMichel, Jurgenen_US
dc.contributor.mitauthorKimerling, Lionel C.en_US
dc.relation.journalOptics Expressen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsRaghunathan, Vivek; Izuhara, Tomoyuki; Michel, Jurgen; Kimerling, Lionelen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
mit.licensePUBLISHER_POLICYen_US


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