| dc.contributor.author | Cai, Yan | |
| dc.contributor.author | Bessette, Jonathan T. | |
| dc.contributor.author | Kimerling, Lionel C. | |
| dc.contributor.author | Michel, Jurgen | |
| dc.contributor.author | Camacho-Aguilera, Rodolfo Ernesto | |
| dc.date.accessioned | 2013-07-30T18:43:42Z | |
| dc.date.available | 2013-07-30T18:43:42Z | |
| dc.date.issued | 2012-09 | |
| dc.date.submitted | 2012-09 | |
| dc.identifier.issn | 2159-3930 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/79734 | |
| dc.description.abstract | We demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 10[superscript 20]cm[superscript −3], and uniform activated dopant concentrations above 4 × 10[superscript 19]cm[superscript −3] in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of phosphorus diffusion source is shown. | en_US |
| dc.description.sponsorship | United States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative (Si-Based Laser Initiative) | en_US |
| dc.description.sponsorship | National Science Foundation (U.S.). Graduate Research Fellowship Program (1122374) | en_US |
| dc.description.sponsorship | APIC Corporation. Fully LASER Integrated Photonics (FLIP) Program | en_US |
| dc.description.sponsorship | Naval Air Warfare Center (U.S.). Aircraft Division (OTA N00421-03-9-0002) | en_US |
| dc.language.iso | en_US | |
| dc.publisher | Optical Society of America | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1364/OME.2.001462 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | MIT web domain | en_US |
| dc.title | High active carrier concentration in n-type, thin film Ge using delta-doping | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Camacho-Aguilera, Rodolfo E. et al. “High Active Carrier Concentration in N-type, Thin Film Ge Using Delta-doping.” Optical Materials Express 2.11 (2012): 1462. © 2012 OSA | en_US |
| dc.contributor.department | MIT Materials Research Laboratory | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
| dc.contributor.mitauthor | Camacho-Aguilera, Rodolfo Ernesto | en_US |
| dc.contributor.mitauthor | Cai, Yan | en_US |
| dc.contributor.mitauthor | Bessette, Jonathan T. | en_US |
| dc.contributor.mitauthor | Kimerling, Lionel C. | en_US |
| dc.contributor.mitauthor | Michel, Jurgen | en_US |
| dc.relation.journal | Optical Materials Express | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Camacho-Aguilera, Rodolfo E.; Cai, Yan; Bessette, Jonathan T.; Kimerling, Lionel C.; Michel, Jurgen | en_US |
| dc.identifier.orcid | https://orcid.org/0000-0002-3913-6189 | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
