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dc.contributor.authorCai, Yan
dc.contributor.authorBessette, Jonathan T.
dc.contributor.authorKimerling, Lionel C.
dc.contributor.authorMichel, Jurgen
dc.contributor.authorCamacho-Aguilera, Rodolfo Ernesto
dc.date.accessioned2013-07-30T18:43:42Z
dc.date.available2013-07-30T18:43:42Z
dc.date.issued2012-09
dc.date.submitted2012-09
dc.identifier.issn2159-3930
dc.identifier.urihttp://hdl.handle.net/1721.1/79734
dc.description.abstractWe demonstrate CVD in situ doping of Ge by utilizing phosphorus delta-doping for the creation of a high dopant diffusion source. Multiple monolayer delta doping creates source phosphorous concentrations above 1 × 10[superscript 20]cm[superscript −3], and uniform activated dopant concentrations above 4 × 10[superscript 19]cm[superscript −3] in a 600-800nm thick Ge layer after in-diffusion. By controlling dopant out-diffusion, near-complete incorporation of phosphorus diffusion source is shown.en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative (Si-Based Laser Initiative)en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Graduate Research Fellowship Program (1122374)en_US
dc.description.sponsorshipAPIC Corporation. Fully LASER Integrated Photonics (FLIP) Programen_US
dc.description.sponsorshipNaval Air Warfare Center (U.S.). Aircraft Division (OTA N00421-03-9-0002)en_US
dc.language.isoen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OME.2.001462en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleHigh active carrier concentration in n-type, thin film Ge using delta-dopingen_US
dc.typeArticleen_US
dc.identifier.citationCamacho-Aguilera, Rodolfo E. et al. “High Active Carrier Concentration in N-type, Thin Film Ge Using Delta-doping.” Optical Materials Express 2.11 (2012): 1462. © 2012 OSAen_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorCamacho-Aguilera, Rodolfo Ernestoen_US
dc.contributor.mitauthorCai, Yanen_US
dc.contributor.mitauthorBessette, Jonathan T.en_US
dc.contributor.mitauthorKimerling, Lionel C.en_US
dc.contributor.mitauthorMichel, Jurgenen_US
dc.relation.journalOptical Materials Expressen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsCamacho-Aguilera, Rodolfo E.; Cai, Yan; Bessette, Jonathan T.; Kimerling, Lionel C.; Michel, Jurgenen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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