Monolithic Ge-on-Si lasers for integrated photonics

Author(s)
Liu, Jifeng; Sun, Xiaochen; Cai, Yan; Kimerling, Lionel C.; Michel, Jurgen; ... Show more
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Abstract
We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility of electrically pumped lasers.
Date issued
2010-09
URI
http://hdl.handle.net/1721.1/79772
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Proceedings of the Group IV Photonics (GFP), 2010 7th IEEE International Conference on
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Liu, Jifeng, Xiaochen Sun, Rodolfo Camacho-Aguilera, Yan Cai, Lionel C. Kimerling, and Jurgen Michel. “Monolithic Ge-on-Si lasers for integrated photonics.” In 7th IEEE International Conference on Group IV Photonics, 1-3. © Copyright 2010 IEEE
Version: Final published version
ISBN
978-1-4244-6344-2
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