Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor

Author(s)
Jifeng, Liu; Michel, Jurgen; Kimerling, Lionel C.
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Abstract
We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this “old” semiconductor material used for the first transistor more than 60 years ago.
Date issued
2010-11
URI
http://hdl.handle.net/1721.1/79809
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics Center
Journal
Proceedings of the 2010 23rd Annual Meetings of the IEEE Photonics Society
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Liu, Jifeng, Jurgen Michel, and Lionel C. Kimerling. “Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor.” 2010 23rd Annual Meetings of the IEEE Photonics Society. IEEE, 2010. 325–326. ©2010 IEEE
Version: Final published version
ISBN
978-1-4244-5369-6
9781-4244-5368-9
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