A Germanium-on-Silicon Laser for on-Chip Applications

Author(s)
Michel, Jurgen; Liu, Jifeng; Kimerling, Lionel C.; Camacho-Aguilera, Rodolfo Ernesto; Bessette, Jonathan T.; ... Show more
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Abstract
Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important issues for electrical excitation of lasing.
Date issued
2011-05
URI
http://hdl.handle.net/1721.1/79858
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Proceedings of the 2011 Conference on Lasers and Electro-Optics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Michel, Jurgen et al. "A germanium-on-silicon laser for on-chip applications." 2011 Conference on Lasers and Electro-Optics (2011). © 2011 Optical Society of America
Version: Final published version
ISBN
978-1-4577-1223-4
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