Electron-beam-induced deposition of 3-nm-half-pitch patterns on bulk Si
Author(s)
van Oven, J. C.; Berwald, F.; Berggren, Karl K.; Kruit, P.; Hagen, C. W.
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This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposited features gradually across the entire pattern, and thus avoid proximity effects; (2) an additional delay was added between exposures to permit diffusion of reactants into the exposed area; and (3) the exposures were phase-synchronized to the dominant noise source (the 50-Hz line voltage) to minimize the effect of noise. The reasons these steps led to significant improvements in patterning resolution are discussed.
Date issued
2011-09Department
Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Publisher
American Vacuum Society (AVS)
Citation
van Oven, J. C., F. Berwald, K. K. Berggren, P. Kruit, and C. W. Hagen. Electron-beam-induced Deposition of 3-nm-half-pitch Patterns on Bulk Si. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 29, no. 6 (2011): 06F305.
Version: Author's final manuscript
ISSN
10711023