Monolithic III-V/Si Integration
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We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Al[subscript 2]O[subscript 3]/GaAs process for III-V MOS.
Date issued
2008-10Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Fitzgerald, E.A. et al. “Monolithic III-V/Si Integration.” IEEE, 2008. 1421–1424. © Copyright 2008 IEEE
Version: Final published version
ISBN
978-1-4244-2186-2
978-1-4244-2185-5