Show simple item record

dc.contributor.authorLiu, Jifeng
dc.contributor.authorSun, Xiaochen
dc.contributor.authorKimerling, Lionel C.
dc.contributor.authorMichel, Jurgen
dc.date.accessioned2013-09-26T20:03:57Z
dc.date.available2013-09-26T20:03:57Z
dc.date.issued2009-05
dc.date.submitted2009-04
dc.identifier.issn0146-9592
dc.identifier.issn1539-4794
dc.identifier.urihttp://hdl.handle.net/1721.1/81205
dc.description.abstractLasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor technology, can be band engineered by tensile strain and n-type doping to achieve efficient light emission and optical gain from its direct gap transition. We report on what is to our knowledge the first experimental observation of optical gain in the wavelength range of 1600–1608 nm from the direct-gap transition of n+ tensile-strained Ge on Si at room temperature under steady-state optical pumping. This experimental result confirms that the band-engineered Ge on Si is a promising gain medium for monolithic lasers on Si.en_US
dc.description.sponsorshipUnited States. Office of Naval Research (Multi University Research Initiative (MURI), Si-based Laser Initiative)en_US
dc.language.isoen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OL.34.001738en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleDirect-gap optical gain of Ge on Si at room temperatureen_US
dc.typeArticleen_US
dc.identifier.citationLiu, Jifeng, Xiaochen Sun, Lionel C. Kimerling, and Jurgen Michel. “Direct-gap optical gain of Ge on Si at room temperature.” Optics Letters 34, no. 11 (May 29, 2009): 1738.© 2009 Optical Society of America.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microphotonics Centeren_US
dc.contributor.mitauthorLiu, Jifengen_US
dc.contributor.mitauthorSun, Xiaochenen_US
dc.contributor.mitauthorKimerling, Lionel C.en_US
dc.contributor.mitauthorMichel, Jurgenen_US
dc.relation.journalOptics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsLiu, Jifeng; Sun, Xiaochen; Kimerling, Lionel C.; Michel, Jurgenen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record