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dc.contributor.authorKim, Donghun
dc.contributor.authorKim, Dong-Ho
dc.contributor.authorLee, Joo-Hyoung
dc.contributor.authorGrossman, Jeffrey C.
dc.date.accessioned2013-10-04T17:15:12Z
dc.date.available2013-10-04T17:15:12Z
dc.date.issued2013-05
dc.date.submitted2012-12
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.urihttp://hdl.handle.net/1721.1/81326
dc.description.abstractAlthough the stoichiometry of bulk lead sulfide (PbS) is exactly 1∶1, that of quantum dots (QDs) can be considerably different from this crystalline limit. Employing first-principles calculations, we show that the impact of PbS QD stoichiometry on the electronic structure can be enormous, suggesting that control over the overall stoichiometry in the QD will play a critical role for improving the efficiency of optoelectronic devices made with PbS QDs. In particular, for bare PbS QDs, we find that: (i) stoichiometric PbS QDs are free from midgap states even without ligand passivation and independent of shape, (ii) off stoichiometry in PbS QDs introduces new states in the gap that are highly localized on certain surface atoms, and (iii) further deviations in stoichiometry lead to QDs with “metallic” behavior, with a dense number of energy states near the Fermi level. We further demonstrate that this framework holds for the case of passivated QDs by considering the attachment of ligand molecules as stoichiometry variations. Our calculations show that an optimal number of ligands makes the QD stoichiometric and heals unfavorable electronic structure, whereas too few or too many ligands cause effective off stoichiometry, resulting in QDs with defect states in the gap.en_US
dc.description.sponsorshipSamsung Electronics Co. (Scholarship foundation)en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.110.196802en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleImpact of Stoichiometry on the Electronic Structure of PbS Quantum Dotsen_US
dc.typeArticleen_US
dc.identifier.citationKim, Donghun, Dong-Ho Kim, Joo-Hyoung Lee, and Jeffrey C. Grossman. Impact of Stoichiometry on the Electronic Structure of PbS Quantum Dots. Physical Review Letters 110, no. 19 (May 2013). © 2013 American Physical Society.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorKim, Donghunen_US
dc.contributor.mitauthorGrossman, Jeffrey C.en_US
dc.relation.journalPhysical Review Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsKim, Donghun; Kim, Dong-Ho; Lee, Joo-Hyoung; Grossman, Jeffrey C.en_US
dc.identifier.orcidhttps://orcid.org/0000-0003-1281-2359
dc.identifier.orcidhttps://orcid.org/0000-0002-6419-4129
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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