Optimization of out-of-plane magnetized Co/Pt multilayers with resistive buffer layers
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Ta oxide (TaOx) is investigated as a resistive buffer layer for the growth of high-quality Co/Pt multilayers with perpendicular magnetic anisotropy (PMA). The Pt/(Co/Pt)3 films grown on TaOx buffer layers exhibit stronger PMA than those grown on Pt buffer layers, and are of comparable quality to films grown on metallic Ta. The optimized multilayers with TaOx buffer layers remain out-of-plane magnetized for Co layer thicknesses up to 10 Å without introducing a metallic current-shunting path, making these films attractive for spintronic devices using spin-polarized current.
Date issued
2011-08Department
Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
Journal of Applied Physics
Publisher
American Institute of Physics
Citation
Emori, Satoru, and Geoffrey S. D. Beach. Optimization of Out-of-plane Magnetized Co/Pt Multilayers with Resistive Buffer Layers. Journal of Applied Physics 110, no. 3 (2011): 033919.© 2011 American Institute of Physics.
Version: Final published version
ISSN
00218979