dc.contributor.author | Li, Libing | |
dc.contributor.author | Joh, Jungwoo | |
dc.contributor.author | Thompson, Carl V. | |
dc.contributor.author | del Alamo, Jesus A. | |
dc.date.accessioned | 2014-04-11T18:32:58Z | |
dc.date.available | 2014-04-11T18:32:58Z | |
dc.date.issued | 2012-04 | |
dc.date.submitted | 2012-02 | |
dc.identifier.issn | 00036951 | |
dc.identifier.issn | 1077-3118 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/86121 | |
dc.description.abstract | The two-dimensional spatial distribution of structural degradation of AlGaN/GaN high electron mobility transistors was investigated under high-power electrical stressing using atomic force and scanning electron microscopy. It was found that pits form on the surface of the GaN cap layer at the edges of the gate fingers in the middle of the device. The average pit area and density increase gradually from the edge to the center of the fingers and are more common along inner fingers than fingers. It was also found that pit formation and growth are thermally activated. | en_US |
dc.description.sponsorship | United States. Defense Advanced Research Projects Agency (ARL Contract W911QX-05-C-0087) | en_US |
dc.description.sponsorship | United States. Office of Naval Research. Multidisciplinary University Research Initiative (Grant N00014-08-1-0655) | en_US |
dc.language.iso | en_US | |
dc.publisher | American Institute of Physics (AIP) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.4707163 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | MIT web domain | en_US |
dc.title | Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Li, Libing, Jungwoo Joh, J. A. del Alamo, and Carl V. Thompson. “Spatial Distribution of Structural Degradation Under High-Power Stress in AlGaN/GaN High Electron Mobility Transistors.” Appl. Phys. Lett. 100, no. 17 (2012): 172109. © 2012 American Institute of Physics | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Microsystems Technology Laboratories | en_US |
dc.contributor.mitauthor | Li, Libing | en_US |
dc.contributor.mitauthor | Thompson, Carl V. | en_US |
dc.contributor.mitauthor | Joh, Jungwoo | en_US |
dc.contributor.mitauthor | del Alamo, Jesus A. | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Li, Libing; Joh, Jungwoo; del Alamo, J. A.; Thompson, Carl V. | en_US |
dc.identifier.orcid | https://orcid.org/0000-0002-0121-8285 | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |