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dc.contributor.authorLi, Luozhou
dc.contributor.authorTrusheim, Matthew
dc.contributor.authorGaathon, Ophir
dc.contributor.authorKisslinger, Kim
dc.contributor.authorCheng, Ching-Jung
dc.contributor.authorLu, Ming
dc.contributor.authorSu, Dong
dc.contributor.authorYao, Xinwen
dc.contributor.authorHuang, Hsu-Cheng
dc.contributor.authorBayn, Igal
dc.contributor.authorWolcott, Abraham
dc.contributor.authorOsgood, Richard M.
dc.contributor.authorEnglund, Dirk Robert
dc.date.accessioned2014-04-14T16:01:53Z
dc.date.available2014-04-14T16:01:53Z
dc.date.issued2013-07
dc.date.submitted2013-05
dc.identifier.issn21662746
dc.identifier.issn2166-2754
dc.identifier.urihttp://hdl.handle.net/1721.1/86147
dc.description.abstractCommonly used preparation method for thin diamond membranes by focused ion beam (FIB) techniques results in surface damage. Here, the authors introduce an alternative method based on reactive ion etching (RIE). To compare these methods, cross-sectional samples are produced in single crystal diamond, a material that has generated growing interest for a variety of applications. The samples are examined by Raman spectroscopy and high-resolution transmission electron microscopy (TEM). Raman spectra indicate that the crystalline structure of the RIE-processed diamond is preserved, while the FIB-processed diamond membrane has a broad-background sp[superscript 2] feature. Atomic-resolution TEM imaging demonstrates that the RIE-based process produces no detectable damage, while the FIB-processed sample has an amorphous carbon layer of about 11 nm thick. These findings show that the RIE-based process allows the production of diamond TEM samples with reduced near-surface damage and can thus enable direct examination of growth defects and crystallographic damage induced by processes such as ion implantation and bombardment.en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative (Quantum Memories)en_US
dc.description.sponsorshipPresidential Early Career Award for Scientists and Engineersen_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Research. Young Investigator Program (Grant FA9550-11-1-0014)en_US
dc.language.isoen_US
dc.publisherAmerican Vacuum Society (AVS)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.4813559en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleReactive ion etching: Optimized diamond membrane fabrication for transmission electron microscopyen_US
dc.typeArticleen_US
dc.identifier.citationLi, Luozhou, Matthew Trusheim, Ophir Gaathon, Kim Kisslinger, Ching-Jung Cheng, Ming Lu, Dong Su, et al. “Reactive Ion Etching: Optimized Diamond Membrane Fabrication for Transmission Electron Microscopy.” J. Vac. Sci. Technol. B 31, no. 6 (2013): 06FF01. © 2013 American Vacuum Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.mitauthorBayn, Igalen_US
dc.contributor.mitauthorEnglund, Dirk Roberten_US
dc.relation.journalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structuresen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsLi, Luozhou; Trusheim, Matthew; Gaathon, Ophir; Kisslinger, Kim; Cheng, Ching-Jung; Lu, Ming; Su, Dong; Yao, Xinwen; Huang, Hsu-Cheng; Bayn, Igal; Wolcott, Abraham; Osgood, Richard M.; Englund, Dirken_US
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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