Evaluation of nitrogen- and silicon-vacancy defect centres as single photon sources in quantum key distribution

Author(s)
Leifgen, Matthias; Schröder, Tim; Gädeke, Friedemann; Riemann, Robert; Métillon, Valentin; ... Show more
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Abstract
We demonstrate a quantum key distribution (QKD) testbed for room temperature single photon sources based on defect centres in diamond. A BB84 protocol over a short free-space transmission line is implemented. The performance of nitrogen-vacancy (NV) as well as silicon-vacancy defect (SiV) centres is evaluated. An extrapolation for the future applicability of such sources in quantum information processing is discussed.
Date issued
2014-02
URI
http://hdl.handle.net/1721.1/86229
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of Electronics
Journal
New Journal of Physics
Publisher
Institute of Physics Publishing
Citation
Leifgen, Matthias, Tim Schröder, Friedemann Gädeke, Robert Riemann, Valentin Métillon, Elke Neu, Christian Hepp, et al. “Evaluation of Nitrogen- and Silicon-Vacancy Defect Centres as Single Photon Sources in Quantum Key Distribution.” New Journal of Physics 16, no. 2 (February 13, 2014): 023021.
Version: Final published version
ISSN
1367-2630
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