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dc.contributor.authorHu, Qing
dc.contributor.authorReno, John L.
dc.contributor.authorBurghoff, David Patrick
dc.contributor.authorChan, Chun Wang Ivan
dc.date.accessioned2014-05-02T13:40:41Z
dc.date.available2014-05-02T13:40:41Z
dc.date.issued2012-06
dc.date.submitted2012-03
dc.identifier.issn00036951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/86354
dc.description.abstractUsing terahertz time-domain spectroscopy, the gain of scattering-assisted terahertz quantum cascade lasers is measured. By examining the intersubband gain and absorption over a wide range of bias voltages, we experimentally detect energy anticrossings—revealing information about the mechanism of laser action—and compare the resonant-tunneling injection scheme to the scattering-assisted injection scheme. The temperature performance of the gain medium is also measured and discussed, and an additional intersubband transition is identified that contributes to scattering-assisted lasing action at high temperatures.en_US
dc.description.sponsorshipUnited States. National Aeronautics and Space Administrationen_US
dc.description.sponsorshipNational Science Foundation (U.S.)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4732518en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleGain measurements of scattering-assisted terahertz quantum cascade lasersen_US
dc.typeArticleen_US
dc.identifier.citationBurghoff, David, Chun Wang Ivan Chan, Qing Hu, and John L. Reno. “Gain Measurements of Scattering-Assisted Terahertz Quantum Cascade Lasers.” Appl. Phys. Lett. 100, no. 26 (2012): 261111. © 2012 American Institute of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorBurghoff, David Patricken_US
dc.contributor.mitauthorChan, Chun Wang Ivanen_US
dc.contributor.mitauthorHu, Qingen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsBurghoff, David; Wang Ivan Chan, Chun; Hu, Qing; Reno, John L.en_US
dc.identifier.orcidhttps://orcid.org/0000-0003-1982-4053
dc.identifier.orcidhttps://orcid.org/0000-0001-5848-2389
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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