Enhancement of Thermoelectric Properties by Modulation-Doping in Silicon Germanium Alloy Nanocomposites
Name
Modulation Doping-Bo Yu-Nano Letters - Revised-Clean Copy.pdf
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12.98 MB
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Author(s)
Yu, Bo
Zebarjadi, Mona
Wang, Hui
Lukas, Kevin
Wang, Hengzhi
Wang, Dezhi
Opeil, Cyril
Dresselhaus, Mildred
Chen, Gang
Ren, Zhifeng
Date Issued
April 2012
Journal
Nano Letters
Publisher
American Chemical Society
Citation
Yu, Bo, Mona Zebarjadi, Hui Wang, Kevin Lukas, Hengzhi Wang, Dezhi Wang, Cyril Opeil, Mildred Dresselhaus, Gang Chen, and Zhifeng Ren. “Enhancement of Thermoelectric Properties by Modulation-Doping in Silicon Germanium Alloy Nanocomposites.” Nano Lett. 12, no. 4 (April 11, 2012): 2077–2082.
Version
Author's final manuscript
Abstract
Modulation-doping was theoretically proposed and experimentally proved to be effective in increasing the power factor of nanocomposites (Si[subscript 80]Ge[subscript 20])[subscript 70](Si[subscript 100]B[subscript 5])[subscript 30] by increasing the carrier mobility but not the figure-of-merit (ZT) due to the increased thermal conductivity. Here we report an alternative materials design, using alloy Si[subscript 70]Ge[subscript 30] instead of Si as the nanoparticles and Si[subscript 95]Ge[subscript 5] as the matrix, to increase the power factor but not the thermal conductivity, leading to a ZT of 1.3 ± 0.1 at 900 °C.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Department of Mechanical Engineering
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DOI of Published Version
https://doi.org/10.1021/nl3003045
