dc.contributor.author | Razavipour, S. G. | |
dc.contributor.author | Dupont, E. | |
dc.contributor.author | Chan, Chun Wang Ivan | |
dc.contributor.author | Xu, C. | |
dc.contributor.author | Wasilewski, Z. R. | |
dc.contributor.author | Laframboise, Sylvain R. | |
dc.contributor.author | Hu, Qing | |
dc.contributor.author | Ban, D. | |
dc.date.accessioned | 2014-05-08T20:40:58Z | |
dc.date.available | 2014-05-08T20:40:58Z | |
dc.date.issued | 2014-01 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.issn | 1077-3118 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/86885 | |
dc.description.abstract | A Terahertz quantum cascade laser with a rather high injection coupling strength based on an indirectly pumped scheme is designed and experimentally implemented. To effectively suppress leakage current, the chosen quantum cascade module of the device is based on a five-well GaAs/Al[subscript 0.25]Ga[subscript 0.75]As structure. The device lases up to 151 K with a lasing frequency of 2.67 THz. This study shows that the effect of higher energy states in carrier transport and the long-range tunnel coupling between states that belong to non-neighbouring modules have to be considered in quantum design of structures with a narrow injector barrier. Moreover, the effect of interface roughness scattering between the lasing states on threshold current is crucial. | en_US |
dc.description.sponsorship | Natural Sciences and Engineering Research Council of Canada | en_US |
dc.description.sponsorship | Canadian Foundation for Innovation | en_US |
dc.description.sponsorship | CMC Microsystems (Firm) | en_US |
dc.description.sponsorship | Ontario Research Foundation | en_US |
dc.language.iso | en_US | |
dc.publisher | American Institute of Physics | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.4862177 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | MIT web domain | en_US |
dc.title | A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Razavipour, S. G., E. Dupont, C. W. I. Chan, C. Xu, Z. R. Wasilewski, S. R. Laframboise, Q. Hu, and D. Ban. “A High Carrier Injection Terahertz Quantum Cascade Laser Based on Indirectly Pumped Scheme.” Appl. Phys. Lett. 104, no. 4 (January 27, 2014): 041111. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Research Laboratory of Electronics | en_US |
dc.contributor.mitauthor | Chan, Chun Wang Ivan | en_US |
dc.contributor.mitauthor | Hu, Qing | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Razavipour, S. G.; Dupont, E.; Chan, C. W. I.; Xu, C.; Wasilewski, Z. R.; Laframboise, S. R.; Hu, Q.; Ban, D. | en_US |
dc.identifier.orcid | https://orcid.org/0000-0003-1982-4053 | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |