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dc.contributor.authorRazavipour, S. G.
dc.contributor.authorDupont, E.
dc.contributor.authorChan, Chun Wang Ivan
dc.contributor.authorXu, C.
dc.contributor.authorWasilewski, Z. R.
dc.contributor.authorLaframboise, Sylvain R.
dc.contributor.authorHu, Qing
dc.contributor.authorBan, D.
dc.date.accessioned2014-05-08T20:40:58Z
dc.date.available2014-05-08T20:40:58Z
dc.date.issued2014-01
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/86885
dc.description.abstractA Terahertz quantum cascade laser with a rather high injection coupling strength based on an indirectly pumped scheme is designed and experimentally implemented. To effectively suppress leakage current, the chosen quantum cascade module of the device is based on a five-well GaAs/Al[subscript 0.25]Ga[subscript 0.75]As structure. The device lases up to 151 K with a lasing frequency of 2.67 THz. This study shows that the effect of higher energy states in carrier transport and the long-range tunnel coupling between states that belong to non-neighbouring modules have to be considered in quantum design of structures with a narrow injector barrier. Moreover, the effect of interface roughness scattering between the lasing states on threshold current is crucial.en_US
dc.description.sponsorshipNatural Sciences and Engineering Research Council of Canadaen_US
dc.description.sponsorshipCanadian Foundation for Innovationen_US
dc.description.sponsorshipCMC Microsystems (Firm)en_US
dc.description.sponsorshipOntario Research Foundationen_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4862177en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleA high carrier injection terahertz quantum cascade laser based on indirectly pumped schemeen_US
dc.typeArticleen_US
dc.identifier.citationRazavipour, S. G., E. Dupont, C. W. I. Chan, C. Xu, Z. R. Wasilewski, S. R. Laframboise, Q. Hu, and D. Ban. “A High Carrier Injection Terahertz Quantum Cascade Laser Based on Indirectly Pumped Scheme.” Appl. Phys. Lett. 104, no. 4 (January 27, 2014): 041111.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorChan, Chun Wang Ivanen_US
dc.contributor.mitauthorHu, Qingen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsRazavipour, S. G.; Dupont, E.; Chan, C. W. I.; Xu, C.; Wasilewski, Z. R.; Laframboise, S. R.; Hu, Q.; Ban, D.en_US
dc.identifier.orcidhttps://orcid.org/0000-0003-1982-4053
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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