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dc.contributor.authorFathololoumi, S.
dc.contributor.authorDupont, E.
dc.contributor.authorWasilewski, Z. R.
dc.contributor.authorChan, Chun Wang Ivan
dc.contributor.authorRazavipour, S. G.
dc.contributor.authorLaframboise, Sylvain R.
dc.contributor.authorHuang, Shengxi
dc.contributor.authorHu, Qing
dc.contributor.authorBan, D.
dc.contributor.authorLiu, H. C.
dc.date.accessioned2014-05-09T15:57:05Z
dc.date.available2014-05-09T15:57:05Z
dc.date.issued2013
dc.identifier.issn00218979
dc.identifier.urihttp://hdl.handle.net/1721.1/86911
dc.description.abstractWe experimentally investigated the effect of oscillator strength (radiative transition diagonality) on the performance of resonant phonon-based terahertz quantum cascade lasers that have been optimized using a simplified density matrix formalism. Our results show that the maximum lasing temperature (T max) is roughly independent of laser transition diagonality within the lasing frequency range of the devices under test (3.2–3.7 THz) when cavity loss is kept low. Furthermore, the threshold current can be lowered by employing more diagonal transition designs, which can effectively suppress parasitic leakage caused by intermediate resonance between the injection and the downstream extraction levels. Nevertheless, the current carrying capacity through the designed lasing channel in more diagonal designs may sacrifice even more, leading to electrical instability and, potentially, complete inhibition of the device's lasing operation. We propose a hypothesis based on electric-field domain formation and competition/switching of different current-carrying channels to explain observed electrical instability in devices with lower oscillator strengths. The study indicates that not only should designers maximize T max during device optimization but also they should always consider the risk of electrical instability in device operation.en_US
dc.description.sponsorshipNatural Sciences and Engineering Research Council of Canadaen_US
dc.description.sponsorshipCanadian Foundation for Innovationen_US
dc.description.sponsorshipOntario Research Foundationen_US
dc.description.sponsorshipCMC Microsystems (Firm)en_US
dc.description.sponsorshipNational Basic Research Program of China (973 Program) (2011CB925603)en_US
dc.description.sponsorshipNational Natural Science Foundation (China) (Grant 91221201)en_US
dc.description.sponsorshipNational Natural Science Foundation (China) (Grant 61234005)en_US
dc.description.sponsorshipNational Science Foundation (U.S.)en_US
dc.description.sponsorshipUnited States. National Aeronautics and Space Administrationen_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4795614en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleEffect of oscillator strength and intermediate resonance on the performance of resonant phonon-based terahertz quantum cascade lasersen_US
dc.typeArticleen_US
dc.identifier.citationFathololoumi, S., E. Dupont, Z. R. Wasilewski, C. W. I. Chan, S. G. Razavipour, S. R. Laframboise, Shengxi Huang, Q. Hu, D. Ban, and H. C. Liu. “Effect of Oscillator Strength and Intermediate Resonance on the Performance of Resonant Phonon-Based Terahertz Quantum Cascade Lasers.” Journal of Applied Physics 113, no. 11 (2013): 113109.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorChan, Chun Wang Ivanen_US
dc.contributor.mitauthorHu, Qingen_US
dc.relation.journalJournal of Applied Physicsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsFathololoumi, S.; Dupont, E.; Wasilewski, Z. R.; Chan, C. W. I.; Razavipour, S. G.; Laframboise, S. R.; Huang, Shengxi; Hu, Q.; Ban, D.; Liu, H. C.en_US
dc.identifier.orcidhttps://orcid.org/0000-0003-1982-4053
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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