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Chiral angle dependence of resonance window widths in (2n+m) families of single-walled carbon nanotubes

dc.contributor.authorHsieh, Ya-Ping
dc.contributor.authorHofmann, Mario
dc.contributor.authorFarhat, Hootan
dc.contributor.authorBarros, Eduardo B.
dc.contributor.authorKalbac, Martin
dc.contributor.authorKong, Jing
dc.contributor.authorLiang, Chi-Te
dc.contributor.authorChen, Yang-Fang
dc.contributor.authorDresselhaus, Mildred
dc.date.accessioned2014-05-16T19:52:44Z
dc.date.available2014-05-16T19:52:44Z
dc.date.issued2010-03
dc.date.submitted2010-01
dc.identifier.issn00036951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/87046
dc.description.abstractRaman spectra of isolated single-walled carbon nanotubes (SWNTs) were obtained for a wide range of laser excitation energies to study the resonance excitation window of the radial breathing mode feature for members of (2n+m) families. A chiral angle (θ) dependence of the resonance window width (Γ) was observed, which is much stronger than the diameter dependence. The implications of this work on nanotube metrology are discussed.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant 07-04197)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3359427en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleChiral angle dependence of resonance window widths in (2n+m) families of single-walled carbon nanotubesen_US
dc.typeArticleen_US
dc.identifier.citationHsieh, Ya-Ping, Mario Hofmann, Hootan Farhat, Eduardo B. Barros, Martin Kalbac, Jing Kong, Chi-Te Liang, Yang-Fang Chen, and Mildred S. Dresselhaus. “Chiral Angle Dependence of Resonance Window Widths in (2n+m) Families of Single-Walled Carbon Nanotubes.” Appl. Phys. Lett. 96, no. 10 (2010): 103118. © 2010 American Institute of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorHsieh, Ya-Pingen_US
dc.contributor.mitauthorHofmann, Marioen_US
dc.contributor.mitauthorFarhat, Hootanen_US
dc.contributor.mitauthorKong, Jingen_US
dc.contributor.mitauthorDresselhaus, Mildreden_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsHsieh, Ya-Ping; Hofmann, Mario; Farhat, Hootan; Barros, Eduardo B.; Kalbac, Martin; Kong, Jing; Liang, Chi-Te; Chen, Yang-Fang; Dresselhaus, Mildred S.en_US
dc.identifier.orcidhttps://orcid.org/0000-0001-8492-2261
dc.identifier.orcidhttps://orcid.org/0000-0003-0551-1208
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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