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Single-layer graphene on silicon nitride micromembrane resonators

Author(s)
Schmid, Silvan; Bagci, Tolga; Zeuthen, Emil; Taylor, Jacob M.; Herring, Patrick Kenichi; Cassidy, Maja C.; Marcus, Charles M.; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja; Cheol Shin, Yong; Kong, Jing; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S.; Shin, Yong Cheol; ... Show more Show less
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Abstract
Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.
Date issued
2014-02
URI
http://hdl.handle.net/1721.1/87554
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Journal of Applied Physics
Publisher
American Institute of Physics
Citation
Schmid, Silvan, Tolga Bagci, Emil Zeuthen, Jacob M. Taylor, Patrick K. Herring, Maja C. Cassidy, Charles M. Marcus, et al. “Single-Layer Graphene on Silicon Nitride Micromembrane Resonators.” Journal of Applied Physics 115, no. 5 (February 7, 2014): 054513.
Version: Final published version
ISSN
0021-8979
1089-7550

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