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dc.contributor.authorWang, Chong
dc.contributor.authorPotter, Andrew C.
dc.contributor.authorTodadri, Senthil
dc.date.accessioned2014-08-19T19:33:40Z
dc.date.available2014-08-19T19:33:40Z
dc.date.issued2013-09
dc.date.submitted2013-06
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/88919
dc.description.abstractIt is well known that the three-dimensional (3D) electronic topological insulator (TI) with charge-conservation and time-reversal symmetry cannot have a trivial insulating surface that preserves symmetry. It is often implicitly assumed that if the TI surface preserves both symmetries then it must be gapless. Here we show that it is possible for the TI surface to be both gapped and symmetry preserving, at the expense of having surface-topological order. In contrast to analogous bosonic topological insulators, this symmetric surface topological order is intrinsically non-Abelian. We show that the surface-topological order provides a complete nonperturbative definition of the electron TI that transcends a free-particle band-structure picture, and could provide a useful perspective for studying strongly correlated topological Mott insulators.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DGE-0801525)en_US
dc.description.sponsorshipUnited States. Dept. of Energy (DESC-8739-ER46872)en_US
dc.description.sponsorshipSimons Foundation (Award 229736)en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.88.115137en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleGapped symmetry preserving surface state for the electron topological insulatoren_US
dc.typeArticleen_US
dc.identifier.citationWang, Chong, Andrew C. Potter, and T. Senthil. “Gapped Symmetry Preserving Surface State for the Electron Topological Insulator.” Phys. Rev. B 88, no. 11 (September 2013). © 2013 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorWang, Chongen_US
dc.contributor.mitauthorPotter, Andrew C.en_US
dc.contributor.mitauthorTodadri, Senthilen_US
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWang, Chong; Potter, Andrew C.; Senthil, T.en_US
dc.identifier.orcidhttps://orcid.org/0000-0003-4203-4148
dc.identifier.orcidhttps://orcid.org/0000-0001-7004-9609
mit.licensePUBLISHER_POLICYen_US


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