Electronic phases, band gaps, and band overlaps of bismuth antimony nanowires
Author(s)
Tang, Shuang; Dresselhaus, Mildred![Thumbnail](/bitstream/handle/1721.1/88948/Tang-2014-Electronic%20phases%20band%20gaps.pdf.jpg?sequence=8&isAllowed=y)
DownloadTang-2014-Electronic phases band gaps.pdf (2.009Mb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
We have developed an iterative one-dimensional model to study the narrow band gap and the associated nonparabolic dispersion relations for bismuth antimony nanowires. An analytical approximation has also been developed. Based on the general model we have developed, we have calculated and analyzed the electronic phase diagrams and the band-gap/band-overlap map for bismuth antimony nanowires, as a function of stoichiometry, growth orientation, and wire width.
Date issued
2014-01Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Department of PhysicsJournal
Physical Review B
Publisher
American Physical Society
Citation
Tang, Shuang, and Mildred S. Dresselhaus. “Electronic Phases, Band Gaps, and Band Overlaps of Bismuth Antimony Nanowires.” Phys. Rev. B 89, no. 4 (January 2014). © 2014 American Physical Society
Version: Final published version
ISSN
1098-0121
1550-235X