Hole-mobility-limiting atomic structures in hydrogenated amorphous silicon
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PhysRevB.90.104103.pdf
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883.53 KB
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Author(s)
Buonassisi, Tonio
Grossman, Jeffrey C.
Johlin, Eric Carl
Simmons, Christie B.
Date Issued
September 2014
Journal
Physical Review B
Publisher
American Physical Society
Citation
Johlin, Eric, C. B. Simmons, Tonio Buonassisi, and Jeffrey C. Grossman. "Hole-mobility-limiting atomic structures in hydrogenated amorphous silicon." Phys. Rev. B 90, 104103 (September 2014). © 2014 American Physical Society
Version
Final published version
Abstract
Low hole mobility currently limits the efficiency of amorphous silicon photovoltaic devices. We explore three possible phenomena contributing to this low mobility: coordination defects, self-trapping ionization displacement defects, and lattice expansion allowing for hole wave-function delocalization. Through a confluence of experimental and first-principles investigations, we demonstrate the fluidity of the relative prevalence of these defects as film stress and hydrogen content are modified, and that the mobility of a film is governed by an interplay between various defect types.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Massachusetts Institute of Technology. Department of Mechanical Engineering
Massachusetts Institute of Technology. Research Laboratory of Electronics
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.90.104103
