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Understanding of the contact of nanostructured thermoelectric n-type Bi[subscript 2]Te[subscript 2.7]Se[subscript 0.3] legs for power generation applications

Author(s)
Liu, Weishu; Wang, Hengzhi; Wang, Lijuan; Wang, Xiaowei; Joshi, G.; Chen, Gang; Ren, Zhifeng; ... Show more Show less
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Alternative title
Understanding of the contact of nanostructured thermoelectric n-type Bi2Te2.7Se0.3 legs for power generation applications
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Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/
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Abstract
Traditional processes of making contacts (metallization layer) onto bulk crystalline Bi2Te3-based materials do not work for nanostructured thermoelectric materials either because of weak bonding strength or an unstable contact interface at temperatures higher than 200 °C. Hot pressing of nickel contact onto nanostructured thermoelectric legs in a one-step process leads to strong bonding. However, such a process results in large contact resistance in n-type Ni/Bi[subscript 2]Te[subscript 2.7]Se[subscript 0.3]/Ni legs, although not in p-type Ni/Bi[subscript 0.4]Sb[subscript 1.6]Te[subscript 3]/Ni legs. A systematic study was carried out to investigate the detailed reaction and diffusion at the interface of the nickel layer and n-type Bi[subscript 2]Te[subscript 3]-based thermoelectric material layer. We found that a p-type region formed within the n-type Bi[subscript 2]Te[subscript 2.7]Se[subscript 0.3] during hot pressing due to Te deficiency and Ni doping, leading to a large contact resistance.
Date issued
2013-09
URI
http://hdl.handle.net/1721.1/89470
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Journal
Journal of Materials Chemistry A
Publisher
Royal Society of Chemistry
Citation
Liu, Weishu, Hengzhi Wang, Lijuan Wang, Xiaowei Wang, Giri Joshi, Gang Chen, and Zhifeng Ren. “Understanding of the Contact of Nanostructured Thermoelectric n-Type Bi2Te2.7Se0.3 Legs for Power Generation Applications.” J. Mater. Chem. A 1, no. 42 (2013): 13093.
Version: Author's final manuscript
ISSN
2050-7488
2050-7496

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