Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS[subscript 2]
Author(s)Baugher, Britton W. H.; Yang, Yafang; Jarillo-Herrero, Pablo; Churchill, Hugh Olen Hill
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We report electronic transport measurements of devices based on monolayers and bilayers of the transition-metal dichalcogenide MoS[subscript 2]. Through a combination of in situ vacuum annealing and electrostatic gating we obtained ohmic contact to the MoS[subscript 2] down to 4 K at high carrier densities. At lower carrier densities, low-temperature four probe transport measurements show a metal–insulator transition in both monolayer and bilayer samples. In the metallic regime, the high-temperature behavior of the mobility showed strong temperature dependence consistent with phonon-dominated transport. At low temperature, intrinsic field-effect mobilities approaching 1000 cm[superscript 2]/(V·s) were observed for both monolayer and bilayer devices. Mobilities extracted from Hall effect measurements were several times lower and showed a strong dependence on density, likely caused by screening of charged impurity scattering at higher densities.
DepartmentMassachusetts Institute of Technology. Department of Physics
American Chemical Society (ACS)
Baugher, Britton W. H., Hugh O. H. Churchill, Yafang Yang, and Pablo Jarillo-Herrero. “ Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS[subscript 2].” Nano Lett. 13, no. 9 (September 11, 2013): 4212–4216.
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