Study of gate oxide traps in HfO[subscript 2]/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method
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We introduce an ac-transconductance method to profile the gate oxide traps in a HfO[subscript 2] gated AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) that can exchange carriers with metal gates, which in turn causes changes in analog and pulsed channel currents. The method extracts energy and spacial distributions of the oxide and interface traps under the gate from the frequency dependence of ac transconductance. We demonstrate the method using MOS-HEMTs with gate oxides that were annealed at different temperatures.
Date issued
2013-03Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Sun, X., O. I. Saadat, K. S. Chang-Liao, T. Palacios, S. Cui, and T. P. Ma. “Study of Gate Oxide Traps in HfO[subscript 2]/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors by Use of Ac Transconductance Method.” Appl. Phys. Lett. 102, no. 10 (2013): 103504. © 2013 American Institute of Physics
Version: Final published version
ISSN
00036951
1077-3118