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dc.contributor.authorLee, Y.-H.
dc.contributor.authorLing, X.
dc.contributor.authorAkselrod, Gleb Markovitch
dc.contributor.authorLui, Chun Hung
dc.contributor.authorFrenzel, Alex James
dc.contributor.authorPilon, Daniel Victor
dc.contributor.authorKong, Jing
dc.contributor.authorGedik, Nuh
dc.date.accessioned2014-10-21T16:00:18Z
dc.date.available2014-10-21T16:00:18Z
dc.date.issued2014-10
dc.date.submitted2014-06
dc.identifier.issn0031-9007
dc.identifier.issn1079-7114
dc.identifier.urihttp://hdl.handle.net/1721.1/91027
dc.description.abstractOptical excitation typically enhances electrical conduction and low-frequency radiation absorption in semiconductors. We, however, observe a pronounced transient decrease of conductivity in doped monolayer molybdenum disulfide (MoS[subscript 2]), a two-dimensional (2D) semiconductor, using ultrafast optical-pump terahertz-probe spectroscopy. In particular, the conductivity is reduced to only 30% of its equilibrium value at high pump fluence. This anomalous phenomenon arises from the strong many-body interactions in the 2D system, where photoexcited electron-hole pairs join the doping-induced charges to form trions, bound states of two electrons and one hole. The resultant increase of the carrier effective mass substantially diminishes the conductivity.en_US
dc.description.sponsorshipUnited States. Dept. of Energy. Office of Basic Energy Sciences (Grant DE-SC0006423)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant NSF DMR 0845358)en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.113.166801en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleTrion-Induced Negative Photoconductivity in Monolayer MoS[subscript 2]en_US
dc.typeArticleen_US
dc.identifier.citationLui, C. H., et al. "Trion-Induced Negative Photoconductivity in Monolayer MoS[subscript 2]." Phys. Rev. Lett. 113, 166801 (October 2014). © 2014 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorLui, Chun Hungen_US
dc.contributor.mitauthorFrenzel, Alex Jamesen_US
dc.contributor.mitauthorPilon, Daniel Victoren_US
dc.contributor.mitauthorLee, Y.-H.en_US
dc.contributor.mitauthorLing, X.en_US
dc.contributor.mitauthorAkselrod, Gleb Markovitchen_US
dc.contributor.mitauthorKong, Jingen_US
dc.contributor.mitauthorGedik, Nuhen_US
dc.relation.journalPhysical Review Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2014-10-16T22:00:03Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsLui, C. H.; Frenzel, A. J.; Pilon, D. V.; Lee, Y.-H.; Ling, X.; Akselrod, G. M.; Kong, J.; Gedik, N.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-2257-9944
dc.identifier.orcidhttps://orcid.org/0000-0002-6394-4987
dc.identifier.orcidhttps://orcid.org/0000-0003-0551-1208
dc.identifier.orcidhttps://orcid.org/0000-0002-7406-5283
dc.identifier.orcidhttps://orcid.org/0000-0001-5908-3064
dspace.mitauthor.errortrue
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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