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dc.contributor.authorIdeue, T.
dc.contributor.authorBahramy, M. S.
dc.contributor.authorMurakawa, H.
dc.contributor.authorKaneko, Y.
dc.contributor.authorNagaosa, N.
dc.contributor.authorTokura, Y.
dc.contributor.authorCheckelsky, Joseph George
dc.date.accessioned2014-11-17T17:38:41Z
dc.date.available2014-11-17T17:38:41Z
dc.date.issued2014-10
dc.date.submitted2014-10
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/91592
dc.description.abstractBiTeI is a polar semiconductor with gigantic Rashba spin-split bands in bulk. We have investigated the effect of pressure on the electronic structure of this material via magnetotransport. Periods of Shubunikov–de Haas (SdH) oscillations originating from the spin-split outer Fermi surface and inner Fermi surface show disparate responses to pressure, while the carrier number derived from the Hall effect is unchanged with pressure. The associated parameters which characterize the spin-split band structure are strongly dependent on pressure, reflecting the pressure-induced band deformation. We find the SdH oscillations and transport response are consistent with the theoretically proposed pressure-induced band deformation leading to a topological phase transition. Our analysis suggests the critical pressure for the quantum phase transition near P[subscript c] = 3.5 GPa.en_US
dc.description.sponsorshipJapan. Ministry of Education, Culture, Sports, Science and Technology (Grant-in-Aid for Scientific Research 24224009)en_US
dc.description.sponsorshipJapan Society for the Promotion of Science. Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.90.161107en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titlePressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeIen_US
dc.typeArticleen_US
dc.identifier.citationIdeue, T., J. G. Checkelsky, M. S. Bahramy, H. Murakawa, Y. Kaneko, N. Nagaosa, and Y. Tokura. “Pressure Variation of Rashba Spin Splitting Toward Topological Transition in the Polar Semiconductor BiTeI.” Phys. Rev. B 90, no. 16 (October 2014). © 2014 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorCheckelsky, Joseph Georgeen_US
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2014-10-29T22:00:07Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsIdeue, T.; Checkelsky, J. G.; Bahramy, M. S.; Murakawa, H.; Kaneko, Y.; Nagaosa, N.; Tokura, Y.en_US
dc.identifier.orcidhttps://orcid.org/0000-0003-0325-5204
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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