dc.contributor.author | Ideue, T. | |
dc.contributor.author | Bahramy, M. S. | |
dc.contributor.author | Murakawa, H. | |
dc.contributor.author | Kaneko, Y. | |
dc.contributor.author | Nagaosa, N. | |
dc.contributor.author | Tokura, Y. | |
dc.contributor.author | Checkelsky, Joseph George | |
dc.date.accessioned | 2014-11-17T17:38:41Z | |
dc.date.available | 2014-11-17T17:38:41Z | |
dc.date.issued | 2014-10 | |
dc.date.submitted | 2014-10 | |
dc.identifier.issn | 1098-0121 | |
dc.identifier.issn | 1550-235X | |
dc.identifier.uri | http://hdl.handle.net/1721.1/91592 | |
dc.description.abstract | BiTeI is a polar semiconductor with gigantic Rashba spin-split bands in bulk. We have investigated the effect of pressure on the electronic structure of this material via magnetotransport. Periods of Shubunikov–de Haas (SdH) oscillations originating from the spin-split outer Fermi surface and inner Fermi surface show disparate responses to pressure, while the carrier number derived from the Hall effect is unchanged with pressure. The associated parameters which characterize the spin-split band structure are strongly dependent on pressure, reflecting the pressure-induced band deformation. We find the SdH oscillations and transport response are consistent with the theoretically proposed pressure-induced band deformation leading to a topological phase transition. Our analysis suggests the critical pressure for the quantum phase transition near P[subscript c] = 3.5 GPa. | en_US |
dc.description.sponsorship | Japan. Ministry of Education, Culture, Sports, Science and Technology (Grant-in-Aid for Scientific Research 24224009) | en_US |
dc.description.sponsorship | Japan Society for the Promotion of Science. Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program) | en_US |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevB.90.161107 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | American Physical Society | en_US |
dc.title | Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Ideue, T., J. G. Checkelsky, M. S. Bahramy, H. Murakawa, Y. Kaneko, N. Nagaosa, and Y. Tokura. “Pressure Variation of Rashba Spin Splitting Toward Topological Transition in the Polar Semiconductor BiTeI.” Phys. Rev. B 90, no. 16 (October 2014). © 2014 American Physical Society | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Physics | en_US |
dc.contributor.mitauthor | Checkelsky, Joseph George | en_US |
dc.relation.journal | Physical Review B | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dc.date.updated | 2014-10-29T22:00:07Z | |
dc.language.rfc3066 | en | |
dc.rights.holder | American Physical Society | |
dspace.orderedauthors | Ideue, T.; Checkelsky, J. G.; Bahramy, M. S.; Murakawa, H.; Kaneko, Y.; Nagaosa, N.; Tokura, Y. | en_US |
dc.identifier.orcid | https://orcid.org/0000-0003-0325-5204 | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |