Polymethyl methacrylate/hydrogen silsesquioxane bilayer resist electron beam lithography process for etching 25 nm wide magnetic wires
Author(s)Currivan, Jean Anne; Siddiqui, Saima Afroz; Ahn, Sung-Min; Tryputen, Larysa; Beach, Geoffrey Stephen; Baldo, Marc A.; Ross, Caroline A.; ... Show more Show less
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A method of patterning magnetic metallic thin films is presented using a bilayer polymethyl methacrylate and hydrogen silsesquioxane electron beam lithography resist mask combined with ion beam etching. The bilayer resist process allows for the combination of a high-resolution resist mask with easy postprocess removal of the mask without damage to the magnetic quality of the film. Co60Fe20B20 and Co/Ni multilayer films were patterned with electron beam lithography at 10–125 keV down to 25 nm wide features with 2 nm average root-mean square edge roughness. Both the in-plane and out-of-plane magnetic anisotropies of the respective film types were preserved after patterning.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Department of Physics; Massachusetts Institute of Technology. Research Laboratory of Electronics
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
American Institute of Physics
Currivan, Jean Anne, Saima Siddiqui, Sungmin Ahn, Larysa Tryputen, Geoffrey S. D. Beach, Marc A. Baldo, and Caroline A. Ross. “Polymethyl Methacrylate/hydrogen Silsesquioxane Bilayer Resist Electron Beam Lithography Process for Etching 25 Nm Wide Magnetic Wires.” J. Vac. Sci. Technol. B 32, no. 2 (March 2014): 021601. © 2014 American Vacuum Society.
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