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Amber-green light-emitting diodes using order-disorder Al[subscript x]In[subscript 1−x]P heterostructures

Author(s)
Christian, Theresa M.; Beaton, Daniel A.; Mukherjee, Kunal; Alberi, Kirstin; Fitzgerald, Eugene A.; Mascarenhas, Angelo; ... Show more Show less
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Abstract
We demonstrate amber-green emission from Al[subscript x]In[subscript 1– x]P light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded In[subscript y]Ga[subscript 1– y]As buffer layer and feature electron confinement based on the control of Al[subscript x]In[subscript 1– x]P CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm[superscript 2]. The light output at room temperature from our Al[subscript x]In[subscript 1– x]P LED structure emitting at 600 nm is 39% as bright as a Ga[subscript x]In[subscript 1– x]P LED emitting at 650 nm.
Date issued
2013-08
URI
http://hdl.handle.net/1721.1/91914
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Christian, Theresa M., Daniel A. Beaton, Kunal Mukherjee, Kirstin Alberi, Eugene A. Fitzgerald, and Angelo Mascarenhas. “Amber-Green Light-Emitting Diodes Using Order-Disorder AlxIn1−xP Heterostructures.” Journal of Applied Physics 114, no. 7 (2013): 074505. © 2013 AIP Publishing LLC
Version: Final published version
ISSN
00218979
1089-7550

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