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dc.contributor.authorde Mas, Nuria
dc.contributor.authorSchmidt, Martin Arnold
dc.contributor.authorJensen, Klavs F.
dc.date.accessioned2015-01-09T19:48:41Z
dc.date.available2015-01-09T19:48:41Z
dc.date.issued2014-02
dc.date.submitted2013-12
dc.identifier.issn0960-1317
dc.identifier.issn1361-6439
dc.identifier.urihttp://hdl.handle.net/1721.1/92780
dc.description.abstractWe have developed a multilayer, multichannel silicon-based microreactor that uses elemental fluorine as a reagent and generates hydrogen fluoride as a byproduct. Nested potassium hydroxide etching (using silicon nitride and silicon oxide as masking materials) was developed to create a large number of channels (60 reaction channels connected to individual gas and liquid distributors) of significantly different depths (50–650 µm) with sloped walls (54.7° with respect to the (1 0 0) wafer surface) and precise control over their geometry. The wetted areas were coated with thermally grown silicon oxide and electron-beam evaporated nickel films to protect them from the corrosive fluorination environment. Up to four Pyrex layers were anodically bonded to three silicon layers in a total of six bonding steps to cap the microchannels and stack the reaction layers. The average pinhole density in as-evaporated films was 3 holes cm[superscript −2]. Heating during anodic bonding (up to 350 °C for 4 min) did not significantly alter the film composition. Upon fluorine exposure, nickel films (160 nm thick) deposited on an adhesion layer of Cr (10 nm) over an oxidized silicon substrate (up to 500 nm thick SiO[subscript 2]) led to the formation of a nickel fluoride passivation layer. This microreactor was used to investigate direct fluorinations at room temperature over several hours without visible signs of film erosion.en_US
dc.description.sponsorshipMIT Microchemical Systems Technology Centeren_US
dc.language.isoen_US
dc.publisherIOP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0960-1317/24/3/035011en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceProf. Jensen via Erja Kajosaloen_US
dc.titleNested potassium hydroxide etching and protective coatings for silicon-based microreactorsen_US
dc.typeArticleen_US
dc.identifier.citationDe Mas, Nuria, Martin A Schmidt, and Klavs F Jensen. “Nested Potassium Hydroxide Etching and Protective Coatings for Silicon-Based Microreactors.” J. Micromech. Microeng. 24, no. 3 (February 14, 2014): 035011.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.approverJensen, Klavs F.en_US
dc.contributor.mitauthorde Mas, Nuriaen_US
dc.contributor.mitauthorSchmidt, Martin Arnolden_US
dc.contributor.mitauthorJensen, Klavs F.en_US
dc.relation.journalJournal of Micromechanics and Microengineeringen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsde Mas, Nuria; Schmidt, Martin A; Jensen, Klavs Fen_US
dc.identifier.orcidhttps://orcid.org/0000-0001-7192-580X
dc.identifier.orcidhttps://orcid.org/0000-0001-7322-7490
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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