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dc.contributor.authorLi, Mingda
dc.contributor.authorCui, Wenping
dc.contributor.authorYu, Jin
dc.contributor.authorDai, Zuyang
dc.contributor.authorWang, Zhe
dc.contributor.authorKatmis, Ferhat
dc.contributor.authorGuo, Wanlin
dc.contributor.authorMoodera, Jagadeesh
dc.date.accessioned2015-01-29T16:35:26Z
dc.date.available2015-01-29T16:35:26Z
dc.date.issued2015-01
dc.date.submitted2015-01
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/93192
dc.description.abstractThe magnetic proximity effect between the topological insulator (TI) and ferromagnetic insulator (FMI) is considered to have great potential in spintronics. However, a complete determination of interfacial magnetic structure has been highly challenging. We theoretically investigate the interlayer exchange coupling of two FMIs separated by a TI thin film, and show that the particular electronic states of the TI contributing to the proximity effect can be directly identified through the coupling behavior between two FMIs, together with a tunability of the coupling constant. Such an FMI/TI/FMI structure not only serves as a platform to clarify the magnetic structure of the FMI/TI interface, but also provides insights in designing the magnetic storage devices with ultrafast response.en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Materials Research Science and Engineering Centers (Program) (Award DMR-0819762)en_US
dc.description.sponsorshipNational Science Foundation (U.S.). Division of Materials Research (Grant 1207469)en_US
dc.description.sponsorshipUnited States. Office of Naval Research (Grant N00014-13-1-0301)en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.91.014427en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleMagnetic proximity effect and interlayer exchange coupling of ferromagnetic/topological insulator/ferromagnetic trilayeren_US
dc.typeArticleen_US
dc.identifier.citationLi, Mingda, Wenping Cui, Jin Yu, Zuyang Dai, Zhe Wang, Ferhat Katmis, Wanlin Guo, and Jagadeesh Moodera. “Magnetic Proximity Effect and Interlayer Exchange Coupling of Ferromagnetic/topological Insulator/ferromagnetic Trilayer.” Phys. Rev. B 91, no. 1 (January 2015). © 2015 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Plasma Science and Fusion Centeren_US
dc.contributor.departmentFrancis Bitter Magnet Laboratory (Massachusetts Institute of Technology)en_US
dc.contributor.mitauthorLi, Mingdaen_US
dc.contributor.mitauthorYu, Jinen_US
dc.contributor.mitauthorWang, Zheen_US
dc.contributor.mitauthorKatmis, Ferhaten_US
dc.contributor.mitauthorMoodera, Jagadeeshen_US
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2015-01-23T23:00:03Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsLi, Mingda; Cui, Wenping; Yu, Jin; Dai, Zuyang; Wang, Zhe; Katmis, Ferhat; Guo, Wanlin; Moodera, Jagadeeshen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-2480-1211
dc.identifier.orcidhttps://orcid.org/0000-0002-4909-2773
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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