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dc.contributor.authorQazi, Masood
dc.contributor.authorChandrakasan, Anantha P.
dc.contributor.authorAmerasekera, Ajith
dc.date.accessioned2015-01-30T18:16:42Z
dc.date.available2015-01-30T18:16:42Z
dc.date.issued2013-02
dc.identifier.isbn978-1-4673-4516-3
dc.identifier.isbn978-1-4673-4515-6
dc.identifier.isbn978-1-4673-4514-9
dc.identifier.issn0193-6530
dc.identifier.urihttp://hdl.handle.net/1721.1/93232
dc.description.abstractNonvolatile processing-continuously operating a digital circuit and retaining state through frequent power interruptions-creates new applications for portable electronics operating from harvested energy and high-performance systems managing power by operating “normally off”. To enable these scenarios, energy processing must happen in parallel with information processing. This work makes the following contributions: 1) the design of a nonvolatile D flip-flop (NVDFF) with embedded ferroelectric capacitors (fecaps) that senses data robustly and avoids race conditions; 2) the integration of the NVDFF into the ASIC design flow with a power management unit (PMU) and a simple one-bit interface to brown-out detection circuitry; and 3) a characterization of the NVDFF statistical signal margin and the energy cost of retaining data.en_US
dc.description.sponsorshipFocus Center Research Program. Focus Center for Circuit & System Solutionsen_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/ISSCC.2013.6487695en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceChandrakasanen_US
dc.titleA 3.4pJ FeRAM-enabled D flip-flop in 0.13µm CMOS for nonvolatile processing in digital systemsen_US
dc.typeArticleen_US
dc.identifier.citationQazi, M., A. Amerasekera, and A. P. Chandrakasan. “A 3.4pJ FeRAM-Enabled D Flip-Flop in 0.13µm CMOS for Nonvolatile Processing in Digital Systems.” 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers (February 2013).en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.approverChandrakasan, Anantha P.en_US
dc.contributor.mitauthorQazi, Masooden_US
dc.contributor.mitauthorChandrakasan, Anantha P.en_US
dc.relation.journal2013 IEEE International Solid-State Circuits Conference Digest of Technical Papersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dspace.orderedauthorsQazi, M.; Amerasekera, A.; Chandrakasan, A. P.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-5977-2748
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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