Resonant body transistors in standard CMOS technology
Author(s)Marathe, Radhika A.; Wang, Wentao; Mahmood, Zohaib; Daniel, Luca; Weinstein, Dana
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This work presents Si-based electromechanical resonators fabricated at the transistor level of a standard SOI CMOS technology and realized without the need for any postprocessing or packaging. These so-called Resonant Body Transistors (RBTs) are driven capacitively and sensed by piezoresistively modulating the drain current of a Field Effect Transistor (FET). First generation devices operating at 11.1-11.5 GHz with footprints of 3μm×5μm are demonstrated. These unreleased bulk acoustic resonators are completely buried within the CMOS stack and acoustic energy at resonance is confined using Acoustic Bragg Reflectors (ABRs). The complimentary TCE of Si/SiO[subscript 2] in the resonator and the surrounding ABRs results in a temperature stability TCF of <;3 ppm/K. Comparative behavior of devices is also discussed to analyze the effect of fabrication variations and active sensing.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Mechanical Engineering
Proceedings of the 2012 IEEE International Ultrasonics Symposium
Institute of Electrical and Electronics Engineers (IEEE)
Marathe, R., W. Wang, Z. Mahmood, L. Daniel, and D. Weinstein. “Resonant Body Transistors in Standard CMOS Technology.” 2012 IEEE International Ultrasonics Symposium (October 2012).
Author's final manuscript