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dc.contributor.authorLiu, Junwei
dc.contributor.authorFu, Liang
dc.date.accessioned2015-03-03T19:50:51Z
dc.date.available2015-03-03T19:50:51Z
dc.date.issued2015-02
dc.date.submitted2015-01
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/95770
dc.description.abstractBased on electronic structure calculations and theoretical analysis, we predict the (111) thin films of the SnTe class of three-dimensional (3D) topological crystalline insulators (TCIs) realize the quantum spin Hall phase in a wide range of thicknesses. The nontrivial topology originates from the intersurface coupling of the topological surface states of TCIs in the 3D limit. The intersurface coupling changes sign and gives rise to topological phase transitions as a function of film thickness. Furthermore, this coupling can be strongly affected by an external electric field, hence the quantum spin Hall phase can be effectively tuned under the experimentally accessible electric field.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (STC Center for Integrated Quantum Materials)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (Grant DMR-1231319)en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.91.081407en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleElectrically tunable quantum spin Hall state in topological crystalline insulator thin filmsen_US
dc.typeArticleen_US
dc.identifier.citationLiu, Junwei, and Liang Fu. “Electrically Tunable Quantum Spin Hall State in Topological Crystalline Insulator Thin Films.” Phys. Rev. B 91, no. 8 (February 2015). © 2015 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Materials Processing Centeren_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorLiu, Junweien_US
dc.contributor.mitauthorFu, Liangen_US
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2015-02-27T23:00:08Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsLiu, Junwei; Fu, Liangen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-8803-1017
dc.identifier.orcidhttps://orcid.org/0000-0001-8051-7349
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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