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Antiferromagnetic phase of the gapless semiconductor V[subscript 3]Al

Author(s)
Jamer, Michelle E.; Assaf, Badih A.; Sterbinsky, G. E.; Arena, D.; Lewis, L. H.; Radtke, G.; Heiman, D.; Saul, Alberto Andres; ... Show more Show less
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Abstract
Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The AF gapless semiconducting D0[subscript 3] phase of V[subscript 3]Al was successfully synthesized via arc-melting and annealing. The AF properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-thirds of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction, and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing AF elements.
Date issued
2015-03
URI
http://hdl.handle.net/1721.1/96151
Department
Massachusetts Institute of Technology. Department of Civil and Environmental Engineering
Journal
Physical Review B
Publisher
American Physical Society
Citation
Jamer, M. E. et al. “Antiferromagnetic Phase of the Gapless Semiconductor V[subscript 3]Al.” Physical Review B 91.9 (March 2015). © 2015 American Physical Society
Version: Final published version
ISSN
1098-0121
1550-235X

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