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dc.contributor.authorMailoa, Jonathan P.
dc.contributor.authorBailie, Colin D.
dc.contributor.authorJohlin, Eric Carl
dc.contributor.authorHoke, Eric T.
dc.contributor.authorAkey, Austin J.
dc.contributor.authorNguyen, William H.
dc.contributor.authorMcGehee, Michael D.
dc.contributor.authorBuonassisi, Tonio
dc.date.accessioned2015-03-27T15:09:07Z
dc.date.available2015-03-27T15:09:07Z
dc.date.issued2015-03
dc.date.submitted2015-02
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/96207
dc.description.abstractWith the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm[superscript 2] 2-terminal monolithic perovskite/silicon multijunction solar cell with a V [subscript OC] as high as 1.65 V. We achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.en_US
dc.description.sponsorshipBay Area Photovoltaic Consortium (Contract DE-EE0004946)en_US
dc.description.sponsorshipUnited States. Dept. of Energy (Contract DE-EE0006707)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4914179en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMailoaen_US
dc.titleA 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junctionen_US
dc.typeArticleen_US
dc.identifier.citationMailoa, Jonathan P. et al. “A 2-Terminal Perovskite/silicon Multijunction Solar Cell Enabled by a Silicon Tunnel Junction.” Applied Physics Letters 106.12 (2015): 121105. © 2015 AIP Publishing LLCen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Laboratory for Manufacturing and Productivityen_US
dc.contributor.mitauthorMailoa, Jonathan P.en_US
dc.contributor.mitauthorJohlin, Eric Carlen_US
dc.contributor.mitauthorAkey, Austin J.en_US
dc.contributor.mitauthorBuonassisi, Tonioen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsMailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonioen_US
dc.identifier.orcidhttps://orcid.org/0000-0003-2239-6192
dc.identifier.orcidhttps://orcid.org/0000-0001-8345-4937
dspace.mitauthor.errortrue
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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