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dc.contributor.authorEsfarjani, Keivan
dc.contributor.authorChen, Gang
dc.contributor.authorMendoza, Jonathan M.
dc.date.accessioned2015-05-07T16:21:19Z
dc.date.available2015-05-07T16:21:19Z
dc.date.issued2015-05
dc.date.submitted2015-02
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.urihttp://hdl.handle.net/1721.1/96934
dc.description.abstractWe have computed phonon scattering rates and density of states in silicon germanium alloys using Green's function calculations and density functional theory. This method contrasts with the virtual crystal approximation (VCA) used in conjunction with Fermi's golden rule, which cannot capture resonance states occurring through the interaction of substitutional impurities with the host lattice. These resonances are demonstrated by density of states and scattering rate calculations in the dilute limit and show broadening as the concentration increases. Although these deviations become significant from the VCA at high frequencies, the relaxation times obtained for these phonon modes are small in both the full scattering theory and the VCA, resulting in their negligible contribution to thermal transport.en_US
dc.description.sponsorshipUnited States. Dept. of Energy. Office of Science (Solid-State Solar-Thermal Energy Conversion Center Award DE-SC0001299/DE-FG02-09ER46577)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4919661en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceChenen_US
dc.titleAn ab initio study of multiple phonon scattering resonances in silicon germanium alloysen_US
dc.typeArticleen_US
dc.identifier.citationMendoza, Jonathan, Keivan Esfarjani, and Gang Chen. “An Ab Initio Study of Multiple Phonon Scattering Resonances in Silicon Germanium Alloys.” Journal of Applied Physics 117, no. 17 (May 7, 2015): 174301.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.approverChen, Gangen_US
dc.contributor.mitauthorMendoza, Jonathan M.en_US
dc.contributor.mitauthorChen, Gangen_US
dc.relation.journalJournal of Applied Physicsen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsMendoza, Jonathan; Esfarjani, Keivan; Chen, Gangen_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3968-8530
dc.identifier.orcidhttps://orcid.org/0000-0003-2704-3839
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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