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dc.contributor.authorZhang, Junhua
dc.contributor.authorNandkishore, Rahul Mahajan
dc.contributor.authorRossi, E.
dc.date.accessioned2015-05-19T14:17:29Z
dc.date.available2015-05-19T14:17:29Z
dc.date.issued2015-05
dc.date.submitted2015-03
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/97022
dc.description.abstractThe nature of the interaction-driven spontaneously broken-symmetry state in charge-neutral bilayer graphene (BLG) has attracted a lot of interest. Theoretical studies predict various ordered states as the candidates for the ground state of BLG in the absence of external fields. Several experiments have been performed by different groups to identify the nature of the collective ground state in BLG. However, so far, there is no consensus: some experiments show evidence that suggests the establishment of a nematic gapless state, while others present results that are more consistent with the establishment of a fully gapped state. Moreover, even among the experiments that appear to see a bulk gap, some of the samples are found to be conducting (suggesting the existence of gapless edge states), while others are insulating. Here we explore the hypothesis that disorder might explain the discrepancy between experiments. We find that the pair-breaking effect due to nonmagnetic short-range disorder varies among the candidate ground states, giving rise to different amounts of suppression of their mean-field transition temperatures. Our results indicate that BLG can undergo a transition between different ordered states as a function of the disorder strength, providing a possible scenario to resolve the discrepancy between experimental observations.en_US
dc.description.sponsorshipPrinceton University (Princeton Center for Theoretical Science Fellowship)en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.91.205425en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleDisorder-tuned selection of order in bilayer grapheneen_US
dc.typeArticleen_US
dc.identifier.citationZhang, Junhua, Rahul Nandkishore, and E. Rossi. “Disorder-Tuned Selection of Order in Bilayer Graphene.” Phys. Rev. B 91, no. 20 (May 2015). © 2015 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.mitauthorNandkishore, Rahul Mahajanen_US
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2015-05-18T22:00:06Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsZhang, Junhua; Nandkishore, Rahul; Rossi, E.en_US
dspace.mitauthor.errortrue
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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