GaN/Cu[subscript 2]O Heterojunctions for Photovoltaic Applications
Author(s)
Hering, K.P.; Kramm, B.; Meyer, B.K.; Brandt, Riley E.; Buonassisi, Tonio
DownloadBuonassisi_GaN Cu2o heterojunctions.pdf (244.8Kb)
PUBLISHER_CC
Publisher with Creative Commons License
Creative Commons Attribution
Terms of use
Metadata
Show full item recordAbstract
Several growth methods were employed to investigate the photovoltaic behavior of GaN/Cu[subscript 2]O heterojunctions by depositing cuprous oxide thin films on top of gallium nitride templates. The templates consist of a thin layer of GaN:Si grown on a sapphire substrate by metal organic vapor deposition. The deposition procedure was followed up by photolithographic structuring and thermal evaporation of metal contacts. For device characterization, J-V characteristics and external quantum efficiency were measured, pointing to a possible energy barrier in the conduction band. To gain further insight X-ray photoelectron spectroscopy was applied.
Date issued
2014-01Department
Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Photovoltaic Research LaboratoryJournal
Energy Procedia
Publisher
Elsevier
Citation
Hering, K.P., R.E. Brandt, B. Kramm, T. Buonassisi, and B.K. Meyer. “GaN/Cu[subscript 2]O Heterojunctions for Photovoltaic Applications.” Energy Procedia 44 (2014): 32–36.
Version: Final published version
ISSN
18766102