GaN/Cu[subscript 2]O Heterojunctions for Photovoltaic Applications
Author(s)Hering, K.P.; Kramm, B.; Meyer, B.K.; Brandt, Riley E.; Buonassisi, Tonio
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Several growth methods were employed to investigate the photovoltaic behavior of GaN/Cu[subscript 2]O heterojunctions by depositing cuprous oxide thin films on top of gallium nitride templates. The templates consist of a thin layer of GaN:Si grown on a sapphire substrate by metal organic vapor deposition. The deposition procedure was followed up by photolithographic structuring and thermal evaporation of metal contacts. For device characterization, J-V characteristics and external quantum efficiency were measured, pointing to a possible energy barrier in the conduction band. To gain further insight X-ray photoelectron spectroscopy was applied.
DepartmentMassachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Photovoltaic Research Laboratory
Hering, K.P., R.E. Brandt, B. Kramm, T. Buonassisi, and B.K. Meyer. “GaN/Cu[subscript 2]O Heterojunctions for Photovoltaic Applications.” Energy Procedia 44 (2014): 32–36.
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