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Topological Valley Currents in Gapped Dirac Materials

Author(s)
Lensky, Yuri D.; Song, Justin C. W.; Samutpraphoot, Polnop; Levitov, Leonid
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Abstract
Gapped 2D Dirac materials, in which inversion symmetry is broken by a gap-opening perturbation, feature a unique valley transport regime. Topological valley currents in such materials are dominated by bulk currents produced by electronic states just beneath the gap rather than by edge modes. The system ground state hosts dissipationless persistent valley currents existing even when topologically protected edge modes are absent. Valley currents induced by an external bias are characterized by a quantized half-integer valley Hall conductivity. The undergap currents dominate magnetization and the charge Hall effect in a light-induced valley-polarized state.
Date issued
2015-06
URI
http://hdl.handle.net/1721.1/97542
Department
Massachusetts Institute of Technology. Department of Physics
Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Lensky, Yuri D., Justin C. W. Song, Polnop Samutprahoot, and Leonid S. Levitov. "Topological Valley Currents in Gapped Dirac Materials." Phys. Rev. Lett. 114, 256601 (June 2015). © 2015 American Physical Society
Version: Final published version
ISSN
0031-9007
1079-7114

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